document number: 94337 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 input rectifier diode, 10 a 10ETS08PBF, 10ets12pbf high voltage series vishay semiconductors features ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level applications ? input rectification ? vishay semiconductors swit ches and output rectifiers which are available in identical package outlines description the 10ets..pbf rectif ier series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. product summary v f at 10 a < 1.1 v i fsm 200 a v rrm 800 v/1200 v anode 1 2 3 cathode to-220ac base cathode output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c common heatsink of 1 c/w 12.0 16.0 a major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 10 a v rrm 800/1200 v i fsm 200 a v f 10 a, t j = 25 c 1.1 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non- repetitive peak reverse voltage v i rrm at 150 c ma 10ETS08PBF 800 900 0.5 10ets12pbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 10 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 130 a 2 s 10 ms sine pulse, no voltage reapplied 145 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 1450 a 2 ? s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94337 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 10ETS08PBF, 10ets12pbf high voltage series vishay semiconductors input rectifier diode, 10 a note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w for recommended footprint and soldering techniques refer to application note #an-994 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.1 v forward slope resistance r t t j = 150 c 20 m ? threshold voltage v f(to) 0.82 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.05 ma t j = 150 c 0.50 thermal - mechanical specifications parameter symbol test co nditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistan ce, junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, junction to ambient (pcb mount) r thja (1) 62 soldering temperature t s 240 c approximate weight 2g 0.07 oz. marking device case style to-220ac 10ets08 10ets12
document number: 94337 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 10ETS08PBF, 10ets12pbf high voltage series input rectifier diode, 10 a vishay semiconductors fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non- repetitve surge current 80 90 110 100 140 150 130 120 maximum allowable case temperature (c) average forward current (a) 2 10 12 468 0 30 60 90 120 180 10ets.. series r thjc (dc) = 2.5 c/w conduction angle ? 90 150 140 130 120 110 100 4 268 16 18 10 12 14 0 maximum allowable case temperature (c) average forward current (a) dc 30 60 90 120 180 10ets.. series r thjc (dc) = 2.5 c/w ? conduction period 8 2 0 4 6 10 14 12 16 maximum average forward power loss (w) average forward current (a) 2468 10 0 180 120 90 60 30 conduction angle ? 10ets.. series t j = 150 c rms limit 0 2 4 6 8 10 12 14 16 18 20 16 14 12 10 02468 maximum average forward power loss (w) average forward current (a) dc 180 120 90 60 30 rms limit 10ets.. series t j = 150 c ? conduction period 100 120 140 160 180 200 80 40 60 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 10ets.. series at any rated load condition and with rated v rrm applied following surge. 200 100 120 140 160 180 220 240 40 60 80 0.1 1.0 0.01 peak half sine wave forward current (a) pulse train duration (s) 10ets.. series maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94337 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 10ETS08PBF, 10ets12pbf high voltage series vishay semiconductors input rectifier diode, 10 a fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 1 100 10 instantaneous forward current (a) instantaneous forward voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 0 t j = 25 c t j = 150 c 10ets.. series 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 10ets.. series single pulse
document number: 94337 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 10ETS08PBF, 10ets12pbf high voltage series input rectifier diode, 10 a vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95221 part marking information www.vishay.com/doc?95224 1 - current rating (10 = 10 a) 2 - circuit configuration: 3 - package: 4 - type of silicon: 5 - voltage code x 100 = v rrm 6 - none = standard production pbf = lead (pb)-free e = single diode t = to-220ac s = standard recovery rectifier 08 = 800 v 12 = 1200 v device code 5 1 3 2 4 6 10 e t s 12 pbf
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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